The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
May. 28, 2004
Keiichi Sano, Taipei, TW;
Koji Marumo, Gifu, JP;
Masayuki Koga, Gifu, JP;
Kenya Uesugi, Ohgaki, JP;
Michiru Senda, Gifu, JP;
Kuni Yamamura, Gifu, JP;
Keiichi Sano, Taipei, TW;
Koji Marumo, Gifu, JP;
Masayuki Koga, Gifu, JP;
Kenya Uesugi, Ohgaki, JP;
Michiru Senda, Gifu, JP;
Kuni Yamamura, Gifu, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
When a switching TFT is switched on, a data voltage on a data line is stored in a storage capacitor as a gate voltage of a driver TFT. In this state, a voltage on a pulse drive line is caused to fall. AMOS type capacity element having a second electrode connected to a reference voltage is connected to a gate of the driver TFT. The MOS type capacity element is in an ON state before a fall of the pulse drive line and becomes an OFF state during the fall, and a capacitance changes at the switching of ON state to the OFF state. Therefore, the slope of fall of the gate voltage changes, and the gate voltage after the fall on the pulse drive line can be corrected corresponding to the variation in the threshold values among driver TFTs.