The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Jul. 14, 2005
Jun-ichi Hashimoto, Yokohama, JP;
Tsukuru Katsuyama, Yokohama, JP;
Jun-ichi Hashimoto, Yokohama, JP;
Tsukuru Katsuyama, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active layer has a pair of side surfaces. A second conductive type semiconductor region is provided on the sides and top of the active layer, and the second region of the first conductive type semiconductor region. The bandgap energy of the first conductive type semiconductor region is greater than that of the active layer. The bandgap energy of the second conductive type semiconductor region is greater than that of the active layer. The second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.