The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Aug. 25, 2005
Shirong Liao, Diamond Bar, CA (US);
Jinlin YE, Diamond Bar, CA (US);
Theeradetch Detchprohm, Schenectady, NY (US);
Jyh-chia Chen, Yorba Linda, CA (US);
Yea-chuan Milton Yeh, Santa Monica, CA (US);
Shirong Liao, Diamond Bar, CA (US);
Jinlin Ye, Diamond Bar, CA (US);
Theeradetch Detchprohm, Schenectady, NY (US);
Jyh-Chia Chen, Yorba Linda, CA (US);
Yea-Chuan Milton Yeh, Santa Monica, CA (US);
Blue Photonics Inc., Walnut, CA (US);
Abstract
A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n−1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.