The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Jul. 27, 2004
Hideo Suzuki, Yokohama, JP;
Masahiro Horibe, Tsukuba, JP;
Keiichi Tanabe, Mito, JP;
FUJITSU Limited, Kawasaki, JP;
International Superconductivity Technology Center, the Juridical Foundation, Tokyo, JP;
Abstract
A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer () that defines the size of the ramp-edge junction and a second electrode layer (). The width of the second electrode layer () is greater than the width of the first electrode layer (). The first electrode layer () and the second electrode layer () touch in part, and are separated via a first insulation layer () in remaining part. Because the ramp-edge junction includes the first electrode layer () and the second electrode layer (), the inductance of the ramp-edge junction can be reduced with the critical current density Jbeing kept at a high level.