The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2008

Filed:

Aug. 10, 2005
Applicants:

John A. Rowlands, Toronto, CA;

Wei Zhao, East Setauket, NY (US);

Inventors:

John A. Rowlands, Toronto, CA;

Wei Zhao, East Setauket, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is an indirect AMFPI wherein a phosphor such as a structured cesium iodide (CsI) is used to convert x-ray energy to optical photons or a charge, which is then detected by a two-dimensional array of either thin-film transistors (TFTs) such as an amorphous a-Se TFTs or a photodiode array. A scanning control circuit generates pulses to turn on the TFTs one row at a time, and thus the charge in the individual arrays is transferred from the TFT to one or more external charge-sensitive amplifiers. The charge-sensitive amplifiers are shared by all the pixels in the same column. The two-dimensional array can be read in real time.


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