The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Mar. 23, 2005
Hideo Oi, Sendai, JP;
Hideo Oi, Sendai, JP;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of forming a microelectronic device () including the steps of forming a sensor component () and a capping component (). The sensor component () includes a sensor structure () and a conductive trace () formed on a first SOI semiconductor wafer (). The capping component () includes a plurality of capping layers () formed on a second SOI semiconductor wafer (). During fabrication the capping component () is bonded to the sensor component () prior to fabrication of a through hole () in the capping component (). Subsequent to bonding the two components together, wafer thinning removes a handle layer () of the first SOI semiconductor wafer () and a handle layer () of the second SOI semiconductor wafer (). A through hole () is etched in the capping component () using a buried oxide layer () of the second SOI semiconductor wafer () as a hard mask (), thereby exposing the conductive trace () formed as a part of the sensor component ().