The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2008

Filed:

Mar. 28, 2003
Applicants:

Qixu Chen, Milpitas, CA (US);

Charles Brucker, Pleasanton, CA (US);

Rajiv Yadav Ranjan, San Jose, CA (US);

Inventors:

Qixu Chen, Milpitas, CA (US);

Charles Brucker, Pleasanton, CA (US);

Rajiv Yadav Ranjan, San Jose, CA (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/66 (2006.01); G11B 5/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

Carbon or boron is added into the CoCr layers of a multiplayer perpendicular magnetic media structure to reduce media noise. The perpendicular magnetic media structure has sharp interfaces between Co-alloy layers and Pd or Pt layers and significantly reduced exchange coupling. In accordance with one embodiment of the invention, the perpendicular magnetic media structure with carbon or boron additives is 700 Å FeCoB/20 Å TaO/700 Å FeCoB/20 Å TaO/700 Å FeCoB/20 Å TaO/158 Å FeCoB/17 Å Ta/49 Å ITO/33 Å CoCrRu/2.5 Å CO/2.5 Å C/[(CoCr)C/Pd]/50 Å CHN. [(CoCr)C/Pd]means 19 layers of the bi-layer stack (CoCr)C/Pd. TaOstands for surface-oxidized Ta and COstands for C oxides. ITO stands for Indium Tin Oxide and consists of InOand SnOat 80 and 20 molecular percent respectively. CHN refers to hydrogenated and nitrogenated carbon.


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