The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Mar. 22, 2006
Shin Sugawara, Higashiomi, JP;
Eigo Takahashi, Higashiomi, JP;
Nobuyuki Kitahara, Higashiomi, JP;
Yoshio Miura, Higashiomi, JP;
Hisao Arimune, Higashiomi, JP;
Shin Sugawara, Higashiomi, JP;
Eigo Takahashi, Higashiomi, JP;
Nobuyuki Kitahara, Higashiomi, JP;
Yoshio Miura, Higashiomi, JP;
Hisao Arimune, Higashiomi, JP;
Kyocera Corporation, Kyoto, JP;
Abstract
In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.