The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Aug. 26, 2002
Akira Sekiya, Tsukuba-shi, Ibaraki, JP;
Yuki Mitsui, Minato-ku, Tokyo, JP;
Yutaka Ohira, Minato-ku, Tokyo, JP;
Taisuke Yonemura, Minato-ku, Tokyo, JP;
Akira Sekiya, Tsukuba-shi, Ibaraki, JP;
Yuki Mitsui, Minato-ku, Tokyo, JP;
Yutaka Ohira, Minato-ku, Tokyo, JP;
Taisuke Yonemura, Minato-ku, Tokyo, JP;
Other;
Abstract
A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.