The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Feb. 22, 2005
Alberto Jose' Di Martino, Syracuse, IT;
Enrico Castaldo, Catania, IT;
Nicolas Demange, Maximin, FR;
Daniele Salvatore Zompi, Misterbianco, IT;
Alberto Jose' Di Martino, Syracuse, IT;
Enrico Castaldo, Catania, IT;
Nicolas Demange, Maximin, FR;
Daniele Salvatore Zompi, Misterbianco, IT;
STMicroelectronics, S.r.l., , IT;
Abstract
A biasing structure for a memory cell storage element, for setting an operating voltage at an accession electrode of the memory cell storage element. The biasing structure includes a biasing transistor coupled to the accession electrode and adapted to set the operating voltage based on a biasing voltage received at a control electrode of the biasing transistor, and a biasing voltage generator for generating the biasing voltage. The biasing voltage generator includes a feedback voltage regulation structure adapted track changes in a threshold voltage of the biasing transistor, so as to keep the operating voltage at the accession electrode of the memory cell storage element substantially stable against operating condition changes.