The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Feb. 08, 2006
Applicant:
Yoshihiro Notani, Tokyo, JP;
Inventor:
Yoshihiro Notani, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high frequency semiconductor device includes a semiconductor substrate, a high frequency semiconductor element on the semiconductor substrate, a high frequency signal transmission line connected at a first end to the high frequency semiconductor element, a high frequency signal input/output pad connected to a second end of the high frequency signal transmission line, the high frequency signal input/output pad extending perpendicular to the length direction of the high frequency signal transmission line, and ground potential pads on opposite longitudinal sides of the high frequency signal input/output pad.