The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Feb. 10, 2006
Cheol-ju Yun, Kyungki-do, KR;
Sun-hoo Park, Kyungki-do, KR;
Cheol-ju Yun, Kyungki-do, KR;
Sun-hoo Park, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A DRAM memory cell includes a semiconductor substrate, an interlayer dielectric having storage node contact plugs that is formed on the semiconductor substrate, and storage node electrodes that are formed on the interlayer dielectric to contact the storage node contact plugs. The storage node contact plugs are formed such that an entrance portion is formed to be larger in linewidth than a contacting portions, and they are formed in gaps between the bit line structures. From a plan view perspective, the storage node electrodes of one column are offset from the storage node contact plugs in an adjacent column, such that the storage node electrodes are in a diagonal arrangement throughout the semiconductor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile