The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Sep. 22, 2006
Robert Lander, Leuven, BE;
Marcus Johannes Henricus Van Dal, Leuven, BE;
Jacob Christopher Hooker, Leuven, BE;
Robert Lander, Leuven, BE;
Marcus Johannes Henricus van Dal, Leuven, BE;
Jacob Christopher Hooker, Leuven, BE;
Interuniversitair Microelektronica Centrum (IMEC), Leuven, BE;
Koninklijke Philips Electronics N.V., BA Eindhoven, NL;
Abstract
A semiconductor device, fabricated by a method, having a semiconductor structure with a silicon region which forms at least one connection region in and/or on a surface of a substrate is disclosed. In one embodiment, the method includes i) forming, at least at the silicon region, a metal cluster layer from a first metal, such that, in the metal cluster layer, metal clusters alternate with sites where there are no metal clusters, the first metal being a non-siliciding metal at predetermined conditions, ii) depositing a metal layer of a second metal on top of the metal cluster layer, the second metal being a siliciding metal and iii) carrying out at least one heat treatment at the predetermined conditions on the second metal layer so as to form metal silicide through reaction of the second metal with the silicon region, wherein atoms of the first metal are displaced in a direction substantially perpendicular to the surface of the substrate.