The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Oct. 20, 2003
Applicants:
Juanita Deloach, Plano, TX (US);
Brian A. Smith, Plano, TX (US);
Inventors:
Juanita DeLoach, Plano, TX (US);
Brian A. Smith, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layerand a hardmask layerlocated over the substratewith plasma, trimming the photoresist layerwith a plasma to create an exposed portionof the hardmask layer, removing the exposed portionwith a plasma to create a trench guide opening, and creating a trenchthrough the trench guide openingwith a plasma.