The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Jun. 09, 2006
Tae Kyun Kim, Yongin-si, KR;
Tae Kyun Kim, Yongin-si, KR;
Hynix Semiconductor Inc., Gyunggi-do, KR;
Abstract
A method for fabricating a semiconductor device with a metal-polycide gate and a recessed channel, including the steps of: forming trenches for a recessed channel in an active area of a semiconductor substrate; forming a gate insulating layer on the semiconductor substrate having the trenches; forming a gate conductive layer on the entire surface of the resulting structure so that the trenches are buried; forming a silicon-rich amorphous metal silicide layer and a gate hard mask on the gate conductive layer; etching the resulting structure until upper portions of the gate conductive layer are removed by a predetermined thickness, upon first patterning for gate stacks, and forming a metal layer on the entire surface of the resulting structure; forming lateral metal capping layers on sides of the silicon-rich amorphous metal silicide layer by blanket etching, completing formation of gate stacks; and thermally processing the silicon-rich amorphous metal silicide layer to form a crystallized metal silicide layer.