The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2008

Filed:

Feb. 22, 2006
Applicants:

Jeung-hwan Park, Gyeonggi-do, KR;

Myoung-kwan Cho, Gyeongsangbuk-do, KR;

Inventors:

Jeung-Hwan Park, Gyeonggi-do, KR;

Myoung-Kwan Cho, Gyeongsangbuk-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01);
U.S. Cl.
CPC ...
Abstract

Integrated circuit devices are provided including an integrated circuit substrate and first, second and third spaced apart insulating regions in the integrated circuit substrate that define first and second active regions. A first gate electrode is provided on the first active region. The first gate electrode has a first portion on the first active region that extends onto the first insulating region and a second portion at an end of the first portion on the first insulating region. A second gate electrode is provided on the second active region. An insulating layer is provided on the first, second and third active regions defining a first gate contact hole that exposes at least a portion of the second portion of the first gate electrode. The first gate electrode is free of a gate contact hole on the first portion of the first gate electrode. A second gate contact hole is provided on the second active region that exposes at least a portion of the second gate electrode. Related methods of fabricating integrated circuit devices are also provided.


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