The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2008

Filed:

Jun. 17, 2005
Applicants:

Satoshi Tamura, Osaka, JP;

Norio Ikedo, Osaka, JP;

Inventors:

Satoshi Tamura, Osaka, JP;

Norio Ikedo, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.


Find Patent Forward Citations

Loading…