The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Mar. 23, 2005
Sheng Teng Hsu, Camas, WA (US);
Tingkai LI, Vancouver, WA (US);
Wei-wei Zhuang, Vancouver, WA (US);
Sharp Laboratories of Amrica, Inc., Camas, WA (US);
Abstract
A nanotip electroluminescence (EL) diode and a method are provided for fabricating said device. The method comprises: forming a plurality of Si nanotip diodes; forming a phosphor layer overlying the nanotip diode; and, forming a top electrode overlying the phosphor layer. The nanotip diodes are formed by: forming a Si substrate with a top surface; forming a Si p-well; forming an n+ layer of Si, having a thickness in the range of 30 to 300 nanometers (nm) overlying the Si p-well; forming a reactive ion etching (RIE)-induced polymer grass overlying the substrate top surface; using the RIE-induced polymer grass as a mask, etching areas of the substrate not covered by the mask; and, forming the nanotip diodes in areas of the substrate covered by the mask.