The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2008
Filed:
Jan. 21, 2004
Hiroko Nakamura, Yokohama, JP;
Shoji Mimotogi, Yokohama, JP;
Yasunobu Onishi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A computer implemented method for development profile simulation in accordance with an embodiment of the present invention includes calculating optical intensities in a photosensitive resist, calculating a spatial average value of the optical intensities, reading a measured changing ratio of a dissolution rate of the photosensitive resist relating to an alkaline concentration changed by at least one of exposure dose on the photosensitive resist, a position in the thickness direction of the photosensitive resist and an alkaline concentration of developer for the photosensitive resist, obtaining a calculated dissolution rate by using the spatial average value and the measured changing ratio, and predicting a pattern shape of the photosensitive resist from the calculated dissolution rate.