The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2008
Filed:
Nov. 04, 2004
Caiwen Yuan, Union City, CA (US);
Susan Xia LI, Fremont, CA (US);
Andy Gray, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
According to one exemplary embodiment, a method for isolating a failure site in a leaky wordline in a memory array includes dividing said leaky wordline into an initial leaky wordline portion and an initial non-leaky wordline portion, where the initial leaky wordline portion has wordline-to-substrate leakage. The initial leaky wordline portion can be determined by using a passive voltage contrast procedure to illuminate the initial leaky wordline portion. The method further includes performing a number of division and identification cycles on the initial leaky wordline portion to determine a final leaky wordline portion. According to this exemplary embodiment, the final leaky wordline portion comprises a predetermined number of memory cells. The method further includes performing a cutting and imaging procedure on the final leaky wordline portion to isolate the failure site.