The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2008
Filed:
Jun. 30, 2005
Louis L. C. Hsu, Fishkill, NY (US);
Brian L. Ji, Fishkill, NY (US);
Chung Hon Lam, Peekskill, NY (US);
Hon-sum Philip Wong, Palo Alto, CA (US);
Louis L. C. Hsu, Fishkill, NY (US);
Brian L. Ji, Fishkill, NY (US);
Chung Hon Lam, Peekskill, NY (US);
Hon-Sum Philip Wong, Palo Alto, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A non-volatile content addressable memory cell comprises: a first phase change material element, the first phase change material element having one end connected to a match-line; a first transistor, the first transistor having a gate connected to a word-line, a source connected to a true bit-read-write-search-line, and a drain connected to another end of the first phase change material element; a second phase change material element, the second phase change material element having one end connected to the match-line; and a second transistor, the second transistor having a gate connected to the word-line, a source connected to a complementary bit-read-write-search-line, and a drain connected to another end of the second phase change material element.