The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2008
Filed:
Feb. 13, 2007
Atsushi Ryokawa, Ube, JP;
Shuhei Yamada, Ube, JP;
Atsushi Ryokawa, Ube, JP;
Shuhei Yamada, Ube, JP;
Central Glass Company, Limited, Ube-shi, JP;
Abstract
A process for producing a high-purity hafnium amide includes the steps of (a) adding a compound which contains a carbonyl group or sulfonyl group and is represented by the formula of A(OXOR)(e.g., CFSOH, Hf(CFSO), (CFSO)O, CFCOH, CHSOH, CHSOH, and (CHSO)O), to a crude hafnium amide which is represented by the formula of Hf[N(R)(R)], where each of Rand Rindependently represents a methyl group or ethyl group, and which contains a zirconium component as an impurity; and (b) subjecting a product of the step (a) to a distillation under reduced pressure, thereby removing the zirconium component from the crude hafnium amide.