The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2008
Filed:
Dec. 10, 2002
Applicants:
Rodger Fehlhaber, München, DE;
Helmut Tews, München, DE;
Inventors:
Rodger Fehlhaber, München, DE;
Helmut Tews, München, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A resistless lithography method for fabricating fine stiuctures is disclosed. IN an embodiment, a semiconductor mask layer (HM) may be formed on a carrier material (TM, HM') and a selective ion implantation (I) being effected in order to dope selected regions () of the semiconductor mask layer (HM). Wet chemical removal of the non doped regions of the semiconductor mask layer (HM) yields a semiconductor mask which can be used for further patterning. A simple and high precision resistless lithography method for structures smaller than 100 nm is obtained in this way.