The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2008
Filed:
Jan. 30, 2006
Applicants:
Shinji Yabuki, Hitachi, JP;
Michinori Wachi, Hitachi, JP;
Kouji Daihou, Hitachi, JP;
Inventors:
Assignee:
Hitachi Cable, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cmor more and 100,000/cmor less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gradient of 20° C./cm or more and 150° C./cm or less formed in the crystal so that the semiconductive GaAs wafer has an in-wafer plane dislocation density of 30,000/cmor more and 100,000/cmor less.
Yabuki, Shinji. (2008). Semiconductive gaas wafer and method of making the same (U.S. Patent No. 7318916). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7318916
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile