The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Apr. 20, 2005
Hiroyuki Sato, Yonezawa, JP;
Kazuhiro Satoh, Yonezawa, JP;
Takashi Goto, Yonezawa, JP;
Tohoku Pioneer Corporation, Tendo-shi, JP;
Abstract
Reverse bias voltage VM is applied to any one of self light emitting elements arranged on a light emitting panelunder detection mode. Current corresponding to weak current flowing to the element is supplied to a transistor Qby the operation of a current mirror circuit comprised of transistors Q, Q. The current mirror circuit is formed with the transistor Qas a control side current source transistor and transistors Qto Qas a controlled side current source transistor. The sizes of the controlled side current source transistors Qto Qare set to, for example, 1:2:4:8 with respect to the control side current source transistor Qso as to construct current amplifying means. Current value amplified by a current comparison type comparatoris compared with current value from a reference current sourceand its output is latched by a latch circuitand stored in a data register. If a weak current over a predetermined value flows when reverse bias voltage is applied to the self light emitting element, it is determined that a possibility that the self light emitting element turns into a light emission fault is high and notifying means is driven appropriately using data stored in the data register