The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Jul. 31, 2003
Tetsuya Matsutani, Kyoto, JP;
Tetsuya Matsutani, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A contact hole formation method includes a process of depositing a BPSG filmon a semiconductor substrateon which transistors are formed, a process of planarizing the BPSG film, a process of depositing a dielectric filmon the BPSG film, and a process of forming contact holesthrough the BPSG filmand the dielectric filmso as to reach the semiconductor substrate, in a case in which gate electrodes are densely formed in some areas and sparsely formed in other areas. The above-described contact hole formation method allows a thickness of the BPSG filmto be uniform irrespective of the density of the gate electrodes, whereby an etching rate becomes uniform over the entire area of the semiconductor device. Thus, it is possible to form contact holes having minimized variations in a contact resistance and a value of leakage current.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile