The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Dec. 07, 2004
Applicants:
Takashi Mimura, Kawasaki, JP;
Keiji Ikeda, Kawasaki, JP;
Inventors:
Takashi Mimura, Kawasaki, JP;
Keiji Ikeda, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The semiconductor device comprises a semiconductor layerformed on an insulation layer, a gate electrodeformed on the semiconductor layer with a gate insulation filmformed therebetween, a source/drain regionformed on the semiconductor layer on both sides of the gate electrode, and a semiconductor regionburied in the insulation layerin a region below the gate electrode. The surface scattering of the carriers and phonon scattering can be prevented while suppressing the short channel effect. Resultantly the semiconductor device can have high mobility and high speed.