The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2008

Filed:

May. 19, 2004
Applicants:

Yasuaki Iwase, Tenri, JP;

Yoshifumi Yaoi, Yamatokooriyama, JP;

Hiroshi Iwata, Nara-ken, JP;

Akihide Shibata, Nara, JP;

Yoshinao Morikawa, Ikoma, JP;

Masaru Nawaki, Nara, JP;

Inventors:

Yasuaki Iwase, Tenri, JP;

Yoshifumi Yaoi, Yamatokooriyama, JP;

Hiroshi Iwata, Nara-ken, JP;

Akihide Shibata, Nara, JP;

Yoshinao Morikawa, Ikoma, JP;

Masaru Nawaki, Nara, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a semiconductor storage device and portable electronic equipment including a nonvolatile memory element that can easily be miniaturized. The semiconductor storage device includes a memory cell arrayin which a plurality of memory elementsare arranged and a write state machine. The memory elementincludes a gate electrodeformed on a semiconductor layervia a gate insulator, a channel region arranged below the gate electrode, diffusion regionsthat are located on both sides of the channel region and have a conductive type opposite to that of the channel region and memory function bodiesthat are located on both sides of the gate electrodeand have a function to retain electric charge. The write state machinecan selectively prevent program and erase of data in the memory elements within a predetermined range.


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