The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2008

Filed:

Nov. 24, 2004
Applicants:

Dean Tran, Westminster, CA (US);

Jerry T. Fang, Palos Verdes Estates, CA (US);

Yoshio Saito, Westchester, CA (US);

Mark Kintis, Manhattan Beach, CA (US);

Chih Chang, Torrance, CA (US);

Phu H. Tran, Huntington Beach, CA (US);

Inventors:

Dean Tran, Westminster, CA (US);

Jerry T. Fang, Palos Verdes Estates, CA (US);

Yoshio Saito, Westchester, CA (US);

Mark Kintis, Manhattan Beach, CA (US);

Chih Chang, Torrance, CA (US);

Phu H. Tran, Huntington Beach, CA (US);

Assignee:

Northrop Grumman Corporation, Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated getter structure and a method for its formation and installation in a circuit module enclosure (). The integrated structure includes a hydrogen getter structure () and selected quantities of a material () that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material () is placed in discrete quantities over the hydrogen getter structure (). In another embodiment, the hydrogen getter structure () is formed over a sheet of the material () and is provided with apertures () to expose the material ().


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