The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7315055 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 01, 2008

Filed:

Nov. 30, 2004
Applicants:

Myoung-kwan Cho, Gyeonggi-do, KR;

Sung-hoi Hur, Seoul, KR;

Eun-suk Cho, Gyeonggi-do, KR;

Inventors:

Myoung-kwan Cho, Gyeonggi-do, KR;

Sung-hoi Hur, Seoul, KR;

Eun-suk Cho, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

Unit cells of silicon-oxide-nitride-oxide-silicon (SONOS) memory devices are provided. The unit cells include an integrated circuit substrate and a SONOS memory cell on the integrated circuit substrate. The SONOS memory cell includes a source region, a drain region and a gate contact. The integrated circuit substrate defines a trench between the source and drain regions and the gate contact is provided in the trench. A floor of the trench extends further into the integrated circuit substrate than lower surfaces of the source and drain regions. Related methods of fabricating SONOS memory cells are also provided.


Find Patent Forward Citations

Cho, Myoung-kwan. (2008). Silicon-oxide-nitride-oxide-silicon (sonos) memory devices having recessed channels (U.S. Patent No. 7315055). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7315055

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