Decoupling capacitor density while maintaining control over aclv regions on a semiconductor integrated circuit

Abstract

In one embodiment, a method of controlling the across-chip line-width variation (ACLV) on a semiconductor integrated circuit includes forming an ACLV controlled region including a plurality of semiconductor devices each having a gate structure and arranging the plurality of semiconductor devices to have a substantially uniform spacing between each gate structure. The method also includes forming a decoupling capacitor region adjacent to the ACLV controlled region. The decoupling capacitor region may include a plurality of capacitor structures each having a conductive structure, such as a polysilicon electrode, for example.