The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Dec. 30, 2005
Myung-ok Kim, Ichon-shi, KR;
Tae-woo Jung, Ichon-shi, KR;
Sung-kwon Lee, Ichon-shi, KR;
Sea-ug Jang, Ichon-shi, KR;
Myung-Ok Kim, Ichon-shi, KR;
Tae-Woo Jung, Ichon-shi, KR;
Sung-Kwon Lee, Ichon-shi, KR;
Sea-Ug Jang, Ichon-shi, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for fabricating a transistor of a semiconductor device is provided. The method includes: forming device isolation layers in a substrate including a bottom structure, thereby defining an active region; etching the active region to a predetermined depth to form a plurality of recess structures each of which has a flat bottom portion with a critical dimension (CD) larger than that of a top portion; and sequentially forming a gate oxide layer and a metal layer on the recess structures; and patterning the gate oxide layer and the metal layer to form a plurality of gate structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile