The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Aug. 21, 2003
Ronald Dekker, Eindhoven, NL;
Jan Baptist Petrus Henricus Van Der Putten, Eindhoven, NL;
Ramon Jacob Havens, Eindhoven, NL;
Ronald Dekker, Eindhoven, NL;
Jan Baptist Petrus Henricus Van Der Putten, Eindhoven, NL;
Ramon Jacob Havens, Eindhoven, NL;
Koninklijke Philips Electronics N. V., Eindhoven, NL;
Abstract
The invention relates to a method of manufacturing a semiconductor device () in which, in a semiconductor body () with a temporary substrate (), at least one semiconductor element () is formed which, on a side of the semiconductor body () opposite to the substrate (), is provided with at least one connection region (), and, on the said side, a dielectric () is formed and patterned to leave free the connection region (), after which a metal layer () is deposited over the dielectric () so as to be in contact with the connection region (), which metal layer () serves as an electric connection conductor of the connection region (), after which the temporary substrate () is removed and the metal layer () also serves as a substrate of the device (). According to the invention, before the metal layer () is deposited, there is formed, around the patterned part of the dielectric () and around the semiconductor element (), an annular region () of a resin having a larger thickness than the dielectric (), and the metal layer () is deposited within the rectangular annular region (). In this way, an individual device () can readily be formed after the metal layer () has been deposited, preferably by pushing the device () out of the region (). Preferably, a (different) photoresist is chosen for the dielectric () and the region (). The invention also comprises a semiconductor device () obtained in this way.