The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Aug. 26, 2005
Applicants:
Kouki Futatsuyama, Kariya, JP;
Yasuo Kitou, Okazaki, JP;
Inventors:
Kouki Futatsuyama, Kariya, JP;
Yasuo Kitou, Okazaki, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a SiC single crystal from a SiC seed crystal is provided. The method includes the steps of: measuring a diameter of the SiC single crystal during a crystal growth of the SiC single crystal; and controlling the diameter of the SiC single crystal to be a predetermined diameter on the basis of the measured diameter. The method provides the SiC single crystal with high quality and large size.