The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Jan. 13, 2005
Applicants:
Michinori Wachi, Hitachi, JP;
Hiroshi Sasabe, Hitachi, JP;
Shunsuke Yamamoto, Hitachi, JP;
Inventors:
Assignee:
Hitachi Cable, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A crystal growth furnace for a compound semiconductor single crystal has: a small diameter section for placing a seed crystal therein; an increasing diameter section that has diameters to increase from the small diameter section to upward; and a constant diameter section that extends from the increasing diameter section to upward. The increasing diameter section has an angle of 120 degrees or more and less than 160 degrees between inner walls opposed to each other.
Wachi, Michinori. (2008). Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace (U.S. Patent No. 7314518). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7314518
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile