The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Aug. 25, 2006
Vinayak Tilak, Schenectady, NY (US);
Jie Jiang, Clifton Park, NY (US);
David Mulford Shaddock, Troy, NY (US);
Stacey Joy Kennerly, Niskayuna, NY (US);
David Richard Esler, Mayfield, NY (US);
Aaron Jay Knobloch, Rexford, NY (US);
Vinayak Tilak, Schenectady, NY (US);
Jie Jiang, Clifton Park, NY (US);
David Mulford Shaddock, Troy, NY (US);
Stacey Joy Kennerly, Niskayuna, NY (US);
David Richard Esler, Mayfield, NY (US);
Aaron Jay Knobloch, Rexford, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.