The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2007

Filed:

Feb. 04, 2005
Applicants:

Dirk Fuhrmann, Essex Junction, VT (US);

Reidar Lindstedt, München, DE;

Inventors:

Dirk Fuhrmann, Essex Junction, VT (US);

Reidar Lindstedt, München, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated semiconductor memory device includes a temperature sensor circuit to generate a temperature-dependent control signal, a reference circuit to generate a temperature-independent reference signal, a comparator circuit and a voltage generator circuit. The comparator circuit generates a first level or second level of an activation signal in a manner dependent on the comparison of the control signal and the reference signal which are both fed to it on an input side. The voltage generator circuit generates a first control signal or a second control signal in a manner dependent on the level of the activation signal. The integrated semiconductor memory enables the generation of two control signals for a selection transistor of a memory cell in a manner dependent on whether the temperature sensor circuit detects a temperature in a first temperature range or in a second temperature range.


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