The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Jun. 16, 2004
David Chapman, Shelburne, VT (US);
Richard Parent, Shelburne, VT (US);
David Chapman, Shelburne, VT (US);
Richard Parent, Shelburne, VT (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A semiconductor device memory device () can include a sense amplifier () enabled according to a first sense signal (setn) and a second sense signal (setp). In a sense operation, a first sense signal (setn) can be driven to a first, below ground potential. Subsequently, in the same sense operation, the first sense signal (setn) can be raised and maintained at a ground potential. Such an approach can substantially eliminate a sense amplifier stall condition that can occur under low temperature and/or low voltage operation. According to another aspect of the embodiments, a more negative logical '0' value can be written back into the memory cell during an access and/or refresh operation. This more negative value is available due to the below ground level provided during a sense operation.