The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2007

Filed:

Jul. 18, 2005
Applicant:

Hwangsoo Choi, Fullerton, CA (US);

Inventor:

Hwangsoo Choi, Fullerton, CA (US);

Assignee:

Microsemi Corporation, Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 7/122 (2006.01); H05B 41/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

A shoot-through prevention circuit is used in a power conversion circuit that uses a passive level-shifter to drive a P-type transistor in a switching network. The shoot-through prevention circuit is coupled between a controller output that provides a driving signal to control the P-type transistor and the passive level-shifter coupled to a control terminal of the P-type transistor. The shoot-through prevention circuit couples the controller output to the passive level-shifter when the driving signal has a first logic level associated with turning on the P-type transistor and isolates the controller output from the passive level-shifter when the driving signal has a second logic level associated with turning off the P-type transistor.


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