The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Jan. 18, 2006
Hirotoshi Terada, Hamamatsu, JP;
Ikuo Arata, Hamamatsu, JP;
Masaharu Tokiwa, Hamamatsu, JP;
Hiroshi Tanabe, Hamamatsu, JP;
Shigeru Sakamoto, Hamamatsu, JP;
Yoshio Isobe, Hamamatsu, JP;
Hirotoshi Terada, Hamamatsu, JP;
Ikuo Arata, Hamamatsu, JP;
Masaharu Tokiwa, Hamamatsu, JP;
Hiroshi Tanabe, Hamamatsu, JP;
Shigeru Sakamoto, Hamamatsu, JP;
Yoshio Isobe, Hamamatsu, JP;
Hamamatsu Photonics K.K., Shizuoka, JP;
Abstract
For a semiconductor device S as an inspected object, there are provided an image acquisition part, an optical systemincluding an objective lens, and a solid immersion lens (SIL)movable between an insertion position including an optical axis from the semiconductor device S to the objective lensand a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SILis located at the standby position and in which focusing and aberration correction are carried out based on a refractive index nand a thickness tof a substrate of the semiconductor device S, and a second mode in which the SILis located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index nand thickness tof the substrate, and a refractive index n, a thickness d, and a radius of curvature Rof SIL. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.