The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2007

Filed:

Feb. 24, 2004
Applicants:

Yuki Miyamoto, Chuo-ku, JP;

Yukio Sakashita, Chuo-ku, JP;

Inventors:

Yuki Miyamoto, Chuo-ku, JP;

Yukio Sakashita, Chuo-ku, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A dielectric thin film, comprising a first bismuth layer-structured compound layerexpressed by a composition formula of (BiO)(ABO)or BiABO, wherein 'm' is a positive number, 'A' is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. Between the first bismuth layer-structured compound layerand a lower portion electrode, a second bismuth layer-structured compound layerincluding bismuth in excess of that in the composition formula of said first bismuth layer-structured compound layer


Find Patent Forward Citations

Miyamoto, Yuki. (2007). High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element (U.S. Patent No. 7312514). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7312514

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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