The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Feb. 10, 2006
Yoshio Kurosawa, Kawasaki, JP;
Yoshio Kurosawa, Kawasaki, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor film is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film protrudes from the resist film. Next, the p-type impurities are introduced into the edge portion of the semiconductor film using the resist film as a mask. The volume density of the p-type impurities in a channel edge portion of the semiconductor film is two to five times the volume density of the p-type impurities in a channel center section. Subsequently, the resist film is removed to form a gate insulating film and a gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile