The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Jul. 07, 2005
Masayuki Hata, Hirakata, JP;
Tatsuya Kunisato, Takatsuki, JP;
Kouji Tominaga, Hirakata, JP;
Yasuhiko Matsushita, Tottori, JP;
Masayuki Hata, Hirakata, JP;
Tatsuya Kunisato, Takatsuki, JP;
Kouji Tominaga, Hirakata, JP;
Yasuhiko Matsushita, Tottori, JP;
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Tottori Sanyo Electric Co., Ltd., Tottori-shi, JP;
Abstract
A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.