The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Nov. 12, 2003
Atushi Watanabe, Tsurugashima, JP;
Atsuya Ito, Tsurugashima, JP;
Hirokazu Takahashi, Tsurugashima, JP;
Yoshinori Kimura, Tsurugashima, JP;
Mamoru Miyachi, Tsurugashima, JP;
Atushi Watanabe, Tsurugashima, JP;
Atsuya Ito, Tsurugashima, JP;
Hirokazu Takahashi, Tsurugashima, JP;
Yoshinori Kimura, Tsurugashima, JP;
Mamoru Miyachi, Tsurugashima, JP;
Pioneer Corporation, Tokyo, JP;
Abstract
The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.