The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Jun. 01, 2005
Hideaki Machida, Yamanashi, JP;
Yoshio Ohshita, Aichi, JP;
Atsushi Ogura, Tokyo, JP;
Masato Ishikawa, Yamanashi, JP;
Hideaki Machida, Yamanashi, JP;
Yoshio Ohshita, Aichi, JP;
Atsushi Ogura, Tokyo, JP;
Masato Ishikawa, Yamanashi, JP;
Tri Chemical Laboratories Inc., Kitatsuru-Gun, JP;
Abstract
A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.