The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Oct. 13, 2006
Scott Gerard Balster, Dallas, TX (US);
Badih El-kareh, Cedar Park, TX (US);
Philipp Steinman, Richardson, TX (US);
Christoph Dirnecker, Haag, DE;
Scott Gerard Balster, Dallas, TX (US);
Badih El-Kareh, Cedar Park, TX (US);
Philipp Steinman, Richardson, TX (US);
Christoph Dirnecker, Haag, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The invention relates to a stacked capacitor () comprising a silicon base plate (), a poly-silicon center plate () arranged above the base plate (), a lower gate-oxide dielectric () arranged between the base plate () and the center plate (), a cover plate () made of a metallic conductor and arranged above the center plate (), and an upper dielectric () arranged between the center plate () and the cover plate (). The cover plate () and the base plate () are electrically connected to each other and together form a first capacitor electrode. The center plate () forms a second capacitor electrode. The invention further relates to an integrated circuit with such a stacked capacitor, as well as to a method for fabrication of a stacked capacitor as part of a CMOS process.