The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Jul. 06, 2005
Applicants:
Jeong-rok Kim, Gyungsangbuk-Do, KR;
Kyung-kyu Kang, Gyungsangnam-Do, KR;
Jae-deuk Shin, Busan, KR;
Jo-hann Jung, Gyungsangbuk-Do, KR;
Myung-woo Nam, Gyungsangbuk-Do, KR;
Inventors:
Jeong-Rok Kim, Gyungsangbuk-Do, KR;
Kyung-Kyu Kang, Gyungsangnam-Do, KR;
Jae-Deuk Shin, Busan, KR;
Jo-Hann Jung, Gyungsangbuk-Do, KR;
Myung-Woo Nam, Gyungsangbuk-Do, KR;
Assignee:
LG. Philips LCD Co., Ltd, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fabrication process for transistor array substrates of different sizes on a common substrate provides quality control, yield, and space efficiency advantages. In particular, a four-mask process, including a mask with diffraction slits, may be employed to fabricate transistors that share common channel characteristics for each of the transistor array substrates.