The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2007

Filed:

Nov. 18, 2005
Applicants:

Yoshihiro Yokota, Kobe, JP;

Kazushi Hayashi, Kobe, JP;

Takeshi Tachibana, Kobe, JP;

Koji Kobashi, Kobe, JP;

Inventors:

Yoshihiro Yokota, Kobe, JP;

Kazushi Hayashi, Kobe, JP;

Takeshi Tachibana, Kobe, JP;

Koji Kobashi, Kobe, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/04 (2006.01); B32B 13/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH+H+O] is −0.2×10or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.


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