The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Jul. 06, 2006
Sahng Gi Park, Daejeon, KR;
Eun Deok Sim, Daejeon, KR;
Jeong Woo Park, Daejeon, KR;
Jae Sik Sim, Daejeon, KR;
Yong Soon Baek, Daejeon, KR;
Sahng Gi Park, Daejeon, KR;
Eun Deok Sim, Daejeon, KR;
Jeong Woo Park, Daejeon, KR;
Jae Sik Sim, Daejeon, KR;
Yong Soon Baek, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index.