The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Sep. 29, 2004
Gregory Belenky, Port Jefferson, NY (US);
Mitra Dutta, Wilmette, IL (US);
Mikhail Kisin, Lake Grove, NY (US);
Serge Luryi, Setauket, NY (US);
Michael Stroscio, Wilmette, IL (US);
Gregory Belenky, Port Jefferson, NY (US);
Mitra Dutta, Wilmette, IL (US);
Mikhail Kisin, Lake Grove, NY (US);
Serge Luryi, Setauket, NY (US);
Michael Stroscio, Wilmette, IL (US);
United States of America as Represented by the Secretary of the Army, Washington, DC (US);
Abstract
Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.